Izilumkiso zokusetyenziswa kweentonga ze-silicon carbide ze amaziko ombane okulinga

1. Xa usebenzisa isithando sombane, ukushisa kwesithando somlilo akufanele kudlule iqondo lokushisa elilinganisiweyo ixesha elide ukuphepha umonakalo kwindawo yokufudumala. Akuvumelekanga ukugalela ulwelo olwahlukeneyo olunokutsha kunye nezinyithi ezinyibilikisiweyo kwiziko.

2. Intonga ye-silicon carbide inzima kwaye i-brittle, ngoko qaphela xa ulayisha kwaye ukhulula.

3. Iintsimbi ze-silicon carbide kufuneka zigcinwe kwindawo eyomileyo ukukhusela ukuwohloka kwesiphelo se-aluminium-plated ngenxa yomswakama.

4. I-KOH etyhidiweyo, i-NaOH, i-Na2CO3 kunye ne-K2CO3 zibolisa i-SiC kwiqondo lobushushu elibomvu. Iintsimbi ze-silicon ze-carbide ziya kutshatyalaliswa ngokudibanisa ne-alkali, i-alkaline yesinyithi yomhlaba, i-sulfates, i-borides, njl., Ngoko ke akufanele idibane neentonga ze-silicon carbide.

5. I-wiring yentonga ye-silicon carbide kufuneka idibane ngokusondeleyo nentloko ye-aluminium emhlophe ekupheleni kwentonga ukuphepha ukuqhuma.

6. Intonga ye-silicon carbide ithatha i-Cl2 kwi-600 ° C kwaye iphendule ngomphunga wamanzi kwi-1300-1400 ° C. Intonga ye-silicon carbide ayinayo i-oxidized ngaphantsi kwe-1000 ° C, kwaye i-oxidized kakhulu kwi-1350 ° C, kwi-1350-1500 ° C. Ifilimu ekhuselayo ye-SiO2 yenziwe phakathi kwaye ibambelele kumphezulu we-silicon carbide rod ukukhusela i-SiC ukuba iqhubeke ne-oxidize.

7. Ixabiso lokuchasana le-silicon carbide rod liyanda njengoko ixesha lokusetyenziswa kwentonga ye-silicon carbide landa, kwaye ukusabela ngolu hlobo lulandelayo:

SiC + 2O2=SiO2 + CO2

SiC + 4H2O = SiO2 + 4H2 + CO2

Ukuphakama komxholo we-SiO2, ixabiso elikhulu lokuchasana kweentonga ze-silicon carbide. Ngoko ke, i-silicon molybdenum endala kunye entsha ayinakuxutywa, ngaphandle koko ixabiso lokuchasana liya kuba lingalingani, elingathandeki kakhulu kwintsimi yeqondo lokushisa kunye nobomi benkonzo yeentsimbi ze-silicon carbide.