Izinyathelo zokuqapha zokusetshenziswa kwezinduku ze-silicon carbide ze izithando zomlilo zikagesi

1. Uma usebenzisa isithando somlilo kagesi, izinga lokushisa lomlilo akufanele lidlule izinga lokushisa elilinganiselwe isikhathi eside ukuze ugweme ukulimala kwesici sokushisa. Akuvunyelwe ukuthela uketshezi oluvuthayo oluhlukahlukene nezinsimbi ezincibilikisiwe esithandweni.

2. Induku ye-silicon carbide iqinile futhi ishwabene, ngakho-ke qaphela lapho ulayisha futhi ukhipha.

3. Izinduku ze-silicon carbide kufanele zigcinwe endaweni eyomile ukuvimbela ukuwohloka kokuphela kwe-aluminium-plated ngenxa yomswakama.

4. I-Molten KOH, i-NaOH, i-Na2CO3 ne-K2CO3 zibola i-SiC ekushiseni okubomvu. Izinduku ze-silicon carbide zizogqwala lapho zithintana ne-alkali, izinsimbi zomhlaba ezine-alkaline, ama-sulfate, ama-borides, njll., ngakho-ke akufanele zixhunywe nezinduku ze-silicon carbide.

5. Izintambo ze-silicon carbide rod kufanele zithintane eduze nekhanda elimhlophe le-aluminium ekugcineni okubandayo kwenduku ukuze kugwenywe inhlansi.

6. Induku ye-silicon carbide ihlangana ne-Cl2 ku-600°C futhi isabela ngomhwamuko wamanzi ku-1300-1400°C. I-silicon carbide rod ayifakwanga i-oxidized ngaphansi kwe-1000 ° C, futhi i-oxidized kakhulu ku-1350 ° C, ku-1350-1500 ° C. Ifilimu evikelayo ye-SiO2 yakheka phakathi futhi inamathele ebusweni be-silicon carbide rod ukuvimbela i-SiC ukuthi ingaqhubeki ne-oxidize.

7. Inani lokumelana le-silicon carbide rod liyakhula njengoba isikhathi sokusebenzisa i-silicon carbide rod sikhula, futhi ukusabela kungokulandelayo:

SiC + 2O2=SiO2 + CO2

I-SiC + 4H2O = SiO2 + 4H2 + CO2

Ukuphakama kokuqukethwe kwe-SiO2, likhulu inani lokumelana le-silicon carbide rods. Ngakho-ke, izinduku ze-silicon molybdenum ezindala nezintsha azikwazi ukuxutshwa, ngaphandle kwalokho inani lokumelana lizobe lingalingani, elingathandeki kakhulu ensimini yokushisa kanye nempilo yesevisi yezinduku ze-silicon carbide.