I-conductivity ye-diode

Isici esibaluleke kakhulu se-diode yi-conductivity yayo ye-unidirectional. Kumjikelezo, i-current ingageleza kuphela isuka ku-anode ye-diode futhi igeleze iphume ku-cathode. Okulandelayo ukuhlola okulula ukukhombisa izici eziya phambili nezasemuva ze-diode.

1. Izici ezinhle.

Kumasekhethi e-elekthronikhi, uma i-anode ye-diode ixhunywe ekugcineni kwamandla aphezulu futhi i-electrode engalungile ixhunywe ekugcineni kwamandla aphansi, i-diode izovulwa. Le ndlela yokuxhuma ibizwa ngokuthi ukuchema phambili. Kumele kuqashelwe ukuthi lapho i-voltage eya phambili esetshenziswa kuzo zombili iziphetho ze-diode incane kakhulu, i-diode namanje ayikwazi ukuvulwa, futhi okwamanje okuhamba phambili okugeleza ku-diode kubuthakathaka kakhulu. Kuphela lapho i-voltage eya phambili ifinyelela inani elithile (leli nani libizwa ngokuthi “i-threshold voltage”, ithubhu ye-germanium imayelana ne-0.2V, futhi ithubhu ye-silicon cishe i-0.6V), i-diode ingavulwa ngokuqondile. Ngemva kokukhanyisa, i-voltage kuyo yonke i-diode ihlala ingashintshile ngokuyisisekelo (ishubhu le-germanium licishe libe ngu-0.3V, ishubhu le-silicon licishe libe ngu-0.7V), okubizwa ngokuthi “ukwehla kwe-voltage eya phambili” ye-diode.

2. Izici zokuhlehla.

Kumjikelezo we-elekthronikhi, i-anode ye-diode ixhunywe ekugcineni okunamandla aphansi, futhi i-electrode engalungile ixhunywe ekugcineni okunamandla amakhulu. Ngalesi sikhathi, cishe akukho okugeleza kwamanje ku-diode, futhi i-diode isesimweni sokucisha. Le ndlela yokuxhuma ibizwa ngokuthi i-reverse bias. Uma i-diode ichemile ngokuhlehlayo, kusazoba khona i-reverse ebuthakathaka egeleza ku-diode, ebizwa ngokuthi i-leakage current. Lapho i-voltage ehlanekezayo kuyo yonke i-diode ikhuphuka ibe yinani elithile, i-reverse yamanje izokhuphuka kakhulu, futhi i-diode izolahlekelwa ukuqhutshwa kwayo kokunye. Lesi simo sibizwa ngokuthi i-diode breakdown.